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Proceedings Paper

High-resolution proximity printing by wave-optically designed complex transmission masks
Author(s): Sven Buehling; Frank Wyrowski; Ernst-Bernhard Kley; Ton J.M. Nellissen; Lingli Wang; Maarten Dirkzwager
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Paper Abstract

Photolithography based on proximity printing offers a high throughput and cost effective patterning technology for production of for instance large area liquid crystal displays. The resolution of this technique is limited due to wave-optical effects in the proximity gap between the binary amplitude mask and the substrate. We can improve the resolution drastically by replacing the conventional photomask with a mask causing both amplitude and phase modulation of the illumination wave. We describe a wave- optical design procedure of such masks. The feasibility of the method is demonstrated by results from computer simulations and practical experiments. We show that for a 50 micron gap a 3 micron line/space pattern is resolved clearly for visible light illumination, whereas under conventional conditions the image is completely degraded. The proximity mask used in our experiments was fabricated by e-beam lithography with four height levels and two amplitude transmission values.

Paper Details

Date Published: 26 April 2001
PDF: 10 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425209
Show Author Affiliations
Sven Buehling, LightTrans GmbH (Germany)
Frank Wyrowski, Friedrich Schiller Univ. of Jena (Germany)
Ernst-Bernhard Kley, Friedrich Schiller Univ. of Jena (Germany)
Ton J.M. Nellissen, Philips Ctr. for Manufacturing Technology (Netherlands)
Lingli Wang, Philips Ctr. for Manufacturing Technology (Netherlands)
Maarten Dirkzwager, Philips Ctr. for Manufacturing Technology (Netherlands)


Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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