A development rate model for lithography simulation of extremely thick resist films is presented. Methods used in the extraction of lithographic modeling parameters for simulation packages such as PROLITH/2 are examined. The results account for hitherto little-considered aspects of the development process which, when implemented in the simulations, give good agreement with practical result. Effects examined include the variation in photoresist dissolution properties as a function of depth into the resist film and diffusion of the developer/resist in the spaces surrounding features. These refinements, which are particularly useful for MEMS and lithography, galvanoformung und abformung (LIGA) applications, can also be applied to conventional lithography in situations where the development models of commercially available software are unable to provide accurate results. The technique also provides a method for quantifying the effectiveness of mechanical, megasonic or ultrasonic during development.

Date Published: 26 April 2001
PDF: 12 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425208

Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)