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Proceedings Paper

Measurement and analysis of reticle and wafer-level contributions to total CD variation
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Paper Abstract

The impact of reticle critical dimension (CD) variations on wafer level CD Performance has been growing with the trend towards sub-wavelength lithography. Reticle manufacturing, CD specifications and qualification procedures must now take into account the details of the wafer fab exposure and prices conditions as well as the mask process. The entire pattern transfer procedure, from design to reticle to wafer to electrical result, must be viewed as a system engineering problem. In this paper we show how hardware and software tools, procedures, and analysis techniques are being developed to support the demanding requirements of the pattern transfer process in the era of 0.13 micron lithography.

Paper Details

Date Published: 26 April 2001
PDF: 9 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425200
Show Author Affiliations
Moshe E. Preil, KLA-Tencor Corp. (United States)
Chris A. Mack, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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