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Proceedings Paper

Toward a universal resist dissolution model for lithography simulation
Author(s): Stewart A. Robertson; Chris A. Mack; Mark John Maslow
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Paper Abstract

In lithography simulation dissolution rate equations are used to map development rate to the resist latent image. This work examines the quality of fit of four rate equations to experimental dissolution data for a wide variety of different resists ranging from medium contrast i-line novolak/DNQ materials to the state-of-the-art 248nm and 193nm chemically amplified photoresists. Three of the rate equations are routinely used for modeling: the Mack rate equation, the Enhanced Mack rate equation, and the Notch rate equation. The fourth is the recently developed Enhanced Notch model. Although each class of photoresist can be fitted reasonably well by one of the conventional rate equations, the Enhanced Notch model yields the best fit to the experimental data in all cases.

Paper Details

Date Published: 26 April 2001
PDF: 12 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425197
Show Author Affiliations
Stewart A. Robertson, Shipley Co. Inc. (United States)
Chris A. Mack, KLA-Tencor Corp. (United States)
Mark John Maslow, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II

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