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Proceedings Paper

STIL II: photoresist silylation simulation using 2D finite element analysis and boundary movement algorithms
Author(s): Thomas J. Kinsella; Arousian Arshak; Declan McDonagh
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Paper Abstract

In this work, a new 2D resist silylation simulator called STIL II has been developed. This simulator extends the 1D methodologies used in the STIL simulator to two dimensions. The silylation process is modeled asa 2D initial boundary value problem, using Fick's Diffusion Equation to describe the diffusion of the silylating agent, which is then solved using in-house written Finite Element Analysis code. This model comprehends the balance of diffusion and reaction rates in the silylation process due to swelling of the resist film. The swelling effect itself, is modeled as a boundary movement problem with the boundaries, and therefore size, of each 2D element being modified in proportion to the silicon concentration in that region. The output of the STIL II simulator is then applied to previously published experimental dat. STIL II predictions agree well with mask center and mask edge silylation thickness experimental results for an I-line scheme. Silylation contrast has ben sued as an indicator to demonstrate the robustness of silylation processing to defocus effects.

Paper Details

Date Published: 26 April 2001
PDF: 10 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425195
Show Author Affiliations
Thomas J. Kinsella, Univ. of Limerick (Ireland)
Arousian Arshak, Univ. of Limerick (Ireland)
Declan McDonagh, Integrated Device Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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