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Proceedings Paper

Laser-induced photodarkening and photobleaching in Ge-As-S thin films
Author(s): Evgenia R. Skordeva; Darina Arsova; Zdravka I. Aneva; Nikolay K. Vuchkov; Dimo N. Astadjov
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Paper Abstract

Photoinduced changes in the structure of amorphous chalcogenide films reflect in their optical transmission as photodarkening (PD) or photobleaching (PB). As a rule As- chalcogenides photodarken while Ge-chalcogenides photobleach when illuminated by band-gap light. Our previous investigations have shown that in GexAs40-xS60 films PD and PB depend on the prevalence of the As- or Ge- content, respectively. In the present work we show for the first time that the appearance of PB or PD in the Ge-As-S films depends not only on the composition, but also on the characteristics of the irradiation source. Pulsed and CW lasers as well as HBO 500 lamp were used to specify the necessary experimental conditions. Possible explanations of the differences in the light effects are discussed.

Paper Details

Date Published: 9 April 2001
PDF: 5 pages
Proc. SPIE 4397, 11th International School on Quantum Electronics: Laser Physics and Applications, (9 April 2001); doi: 10.1117/12.425163
Show Author Affiliations
Evgenia R. Skordeva, Institute of Solid State Physics (Bulgaria)
Darina Arsova, Institute of Solid State Physics (Bulgaria)
Zdravka I. Aneva, Institute of Solid State Physics (Bulgaria)
Nikolay K. Vuchkov, Institute of Solid State Physics (Bulgaria)
Dimo N. Astadjov, Institute of Solid State Physics (Bulgaria)


Published in SPIE Proceedings Vol. 4397:
11th International School on Quantum Electronics: Laser Physics and Applications
Peter A. Atanasov; Stefka Cartaleva, Editor(s)

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