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Proceedings Paper

130-nm node mask development
Author(s): Jan M. Chabala; Suzanne Weaver; David W. Alexander; Maiying Lu; Nam-Wook Kim; Damon M. Cole
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Paper Abstract

As device dimensions shrink, a detailed understanding of the exposure and development of masks is necessary to optimize electron-beam lithography. Because of proximity effects and dose distributions within the resist, achieving small- pattern fidelity is one of the most challenging tasks in maskmaking. The research discussed in this paper examines the exposure and process parameters that influence the fidelity of features on a photomask, with a focus on critical dimension (CD) uniformity, CD linearity, small- feature resolution, and long-term system performance. In accordance with operating recommendations for the MEBESTM 5500 systems, all experiments are performed with ZEP 7000 resist, 10 (mu) C/cm2 dose, ZED 750 developer, and dry etch. Some experiments employ GHOST proximity effect correction (FastPEC). These results are instructive for improved 130 nm node lithography and 180 nm node productivity.

Paper Details

Date Published: 9 April 2001
PDF: 9 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425102
Show Author Affiliations
Jan M. Chabala, Etec Systems, Inc. (United States)
Suzanne Weaver, Etec Systems, Inc. (United States)
David W. Alexander, Etec Systems, Inc. (United States)
Maiying Lu, Etec Systems, Inc. (United States)
Nam-Wook Kim, Etec Systems, Inc. (United States)
Damon M. Cole, Etec Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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