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Proceedings Paper

Investigation of quartz etch rate uniformity for alternating phase-shift mask applications utilizing a next-generation ICP source
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Paper Abstract

As critical dimensions and exposure wavelengths approach the physical limitations of optical lithography, the use of newer techniques such as Phase Shift Photomask Technologies become necessary to extend the viability of DUV lithography tools. Alternating Phase Shift Mask technologies are challenging the capabilities of current quartz dry etch processes; as this phase shift technique is achieved by the precise removal of quartz, the need for ever improving phase shift uniformity across the photomask surface requires extremely uniform quartz etch depth. To this end, a Next Generation ICP (Inductively Coupled Plasma) hardware configuration has been adopted. In this article, the quartz etch parameter space of this new ICP source is explored. Finally, process results including, quartz roughness, sidewall profile, and most importantly quartz etch rate uniformity will be presented.

Paper Details

Date Published: 9 April 2001
PDF: 9 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425099
Show Author Affiliations
C. Strawn, Unaxis USA, Inc. (United States)
Chris Constantine, Unaxis USA, Inc. (United States)
Jason Plumhoff, Unaxis USA, Inc. (United States)
Russell J. Westerman, Unaxis USA, Inc. (United States)


Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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