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Proceedings Paper

Defect inspection of IPL stencil masks with a KLA 351 tool
Author(s): Albrecht Ehrmann; Annika Elsner; Rene Redemann
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Paper Abstract

Optical defect inspection is the standard technique that is currently used for mask defect inspection. In this paper it will be discussed whether this inspection technique is also applicable for ion projection lithography stencil masks. Silicon stencil masks consist of a silicon membrane with 3 micrometers thickness. The patterns are stencil holes and trenches in the membrane. So, the geometry of stencil masks is completely different from chromium or phase shift masks. The key question is if the high aspect ratio is a fundamental problem for optical inspection. A defect test mask has been designed and manufactured. This mask contains 13 defect types over a whole range of sizes down to 0.2 micrometers . To inspect the stencil mask, the inspection parameter set has been adjusted. Most of the defects have been detected successfully down to about the same level as for chromium masks. Pinholes, which represent the worst-case situation due to the significantly reduced transmitted intensity, have been detected down to 0.7 micrometers .

Paper Details

Date Published: 9 April 2001
PDF: 5 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425095
Show Author Affiliations
Albrecht Ehrmann, Infineon Technologies AG (Germany)
Annika Elsner, Infineon Technologies AG (Germany)
Rene Redemann, Infineon Technologies AG (Germany)

Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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