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Proceedings Paper

Phase defect inspection of 130-nm node phase-shift masks using a simultaneous transmitted and reflected light pattern inspection algorithm
Author(s): Larry S. Zurbrick; David Emery; Maciej W. Rudzinski; Mark J. Wihl; Michel Prudhomme M.D.; Christian Crell; Uwe A. Griesinger; Manuel Vorwerk; Mario Hennig
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Paper Abstract

Phase shifting mask technology will be necessary to product integrated circuits at the 130 nm node using KrF wavelength steppers. In order to successfully accomplish this goal, it is necessary to detect and repair phase shifting defects that may occur in the manufacture of these reticles. An inspection algorithm has been developed to improve the phase shift defect detection rate of an UV reticle inspection system and is based upon the simultaneous use of the transmitted and reflected light signals. This paper describes the phase defect sensitivity improvement over transmitted light only pattern inspection results and simultaneous transmitted and reflected light based contamination inspection results.

Paper Details

Date Published: 9 April 2001
PDF: 5 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425092
Show Author Affiliations
Larry S. Zurbrick, KLA-Tencor Corp. (United States)
David Emery, KLA-Tencor Corp. (United States)
Maciej W. Rudzinski, KLA-Tencor Corp. (United States)
Mark J. Wihl, KLA-Tencor Corp. (United States)
Michel Prudhomme M.D., KLA-Tencor Corp. (France)
Christian Crell, Infineon Technologies AG (Germany)
Uwe A. Griesinger, Infineon Technologies AG (Germany)
Manuel Vorwerk, Infineon Technologies AG (Germany)
Mario Hennig, Infineon Technologies AG (Germany)

Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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