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Proceedings Paper

Photomask blanks quality and functionality improvement challenges for the 130-nm node and beyond
Author(s): Hideo Kobayashi; Masao Ushida; Kunihiko Ueno
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Paper Abstract

Lithography will use various types of resolution enhancement technique on reticles such as EAPSM and OPC to extend refractive reduction optics to the 130 nm node and below. And there are mountainous difficulties that confront mask- makers as well as photomask blanks manufacturers now. In this paper, photomask blanks development status is introduced, and issues to be solved for the future are discussed.

Paper Details

Date Published: 9 April 2001
PDF: 6 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425091
Show Author Affiliations
Hideo Kobayashi, HOYA Corp. (Japan)
Masao Ushida, HOYA Corp. (Japan)
Kunihiko Ueno, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents

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