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Proceedings Paper

Application of e-beam chemically amplified resist to devices below 0.18-μm node
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Paper Abstract

We have experimentally studied a possibility of chemically amplified (CA) resist process for mask production in various aspects. The pattern fidelity of CA resist for small patterns such as serifs and scattering bars was compared to that of ZEP7000, the most frequently used e-beam resist. We elucidated the design of delay effect in vacuum during a long e-beam writing time. It proved that critical-dimension (CD) change occurred with an acetal type resist compared to an acrylate type resist. We have achieved CD uniformity of < 10 nm in 3(sigma) within 135 X 135 mm2 field showing a high possibility for CAR process to be applied to the mask production for device generations beyond 180 nm.

Paper Details

Date Published: 9 April 2001
PDF: 4 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425090
Show Author Affiliations
Chan-Uk Jeon, Samsung Electronics Co., Ltd. (South Korea)
Chang-Hwan Kim, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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