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Proceedings Paper

Study of mask aerial images to predict CD proximity and line end shortening of resist patterns
Author(s): Mircea V. Dusa; Judith van Praagh; Andrew Ridley; Bo So
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Paper Abstract

For low-k1 optical lithography, mask effects are more significant than ever before. Also, at low-k1 lithography, mask type, reticle enhancements and exposure illumination conditions interact in a non-linear way, which makes difficult to predict lithography capability from analysis of simulated aerial images. However, it is worth to try using accurate aerial images for prediction of lithography capability, than exposing wafers on today's expensive lithography tools that are used 24 hour a day for production. This paper proposes a method to predict capability of lithography process from measuring mask effects based on the aerial images gathered at NA and coherence settings similar to real exposure conditions and comparing them to printed patterns in resist.

Paper Details

Date Published: 9 April 2001
PDF: 12 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425089
Show Author Affiliations
Mircea V. Dusa, ASML (United States)
Judith van Praagh, ASML (Netherlands)
Andrew Ridley, Metron Technology (United States)
Bo So, Applied Materials (United States)

Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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