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Proceedings Paper

Mask manufacturing contribution on 248-nm and 193-nm lithography performances
Author(s): Alexandra Barberet; Gilles L. Fanget; Jean-Charles Richoilley; Michel Tissier; Yves Quere
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Paper Abstract

In this study, we focus on mask manufacturing contribution on 248 nm and 193 nm lithography performances. The masks are manufactured at DPI using both E-beam/laser writing technologies (e-beam/laser) and two etching processes (wet/dry). Masks are optimized for 150 nm node at wafer scale, neither RET not tuning are used, despite of this, we obtain excellent and unexpected results for inferior nodes which highlight the robustness of the manufacturing mask process being used.

Paper Details

Date Published: 9 April 2001
PDF: 9 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425081
Show Author Affiliations
Alexandra Barberet, DuPont Photomasks, Inc. (France)
Gilles L. Fanget, CEA/LETI (France)
Jean-Charles Richoilley, DuPont Photomasks, Inc. (France)
Michel Tissier, DuPont Photomasks, Inc. (France)
Yves Quere, CEA/LETI (France)


Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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