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Proceedings Paper

Mask definition by nanoimprint lithography
Author(s): D. Lyebyedyev; Hella-Christin Scheer
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Paper Abstract

Mask definition was performed by use of nanoimprint lithography and subsequent reactive ion etching in an oxygen plasma. Polystyrene was chosen as a polymer mask material. Different features ranging from 400 nm up to 4 micrometers were produced in the polymer layer by nanoimprint. Optimization of the residual layer removal process in oxygen RIE was performed at different pressures and self-bias voltages. Low pressure and high bias voltage are required for high quality mask definition.

Paper Details

Date Published: 9 April 2001
PDF: 4 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425079
Show Author Affiliations
D. Lyebyedyev, Univ. of Wuppertal (Germany)
Hella-Christin Scheer, Univ. of Wuppertal (Germany)


Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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