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Proceedings Paper

Low-temperature growth of DKDP for improving laser-induced damage resistance at 350 nm
Author(s): Alan K. Burnham; Michael J. Runkel; Ruth A. Hawley-Fedder; M. L. Carman; Richard A. Torres; Pamela K. Whitman
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Paper Abstract

A set of twenty-three 20-L crystallizer runs exploring the importance of several engineering variables found that growth temperature is the most important variable controlling damage resistance of DKDP over the conditions investigated. Boules grown between 45 degree(s)C and room temperature have a 50% probability of 3(omega) bulk damage that is 1.5 to 2 times higher than boules grown between 65 and 45 degree(s)C. This raises their damage resistance above the NIF tripler specification for 8 J/cm2 operation by a comfortable margin. Solution impurity levels do not correlate with damage resistance for iron less than 200 ppb and aluminum less than 2000 ppb. The possibility that low growth temperatures could increase damage resistance in NIF- scale boules was tested by growing a large boule in a 1000-L crystallizer with a supplemental growth solution tank. Four samples representing early and late pyramid and prism growth are very close to the specification as best it is understood at the present. Implications of low temperature growth for meeting absorbance, homogeneity, and other material specifications are discussed.

Paper Details

Date Published: 12 April 2001
PDF: 10 pages
Proc. SPIE 4347, Laser-Induced Damage in Optical Materials: 2000, (12 April 2001); doi: 10.1117/12.425068
Show Author Affiliations
Alan K. Burnham, Lawrence Livermore National Lab. (United States)
Michael J. Runkel, Lawrence Livermore National Lab. (United States)
Ruth A. Hawley-Fedder, Lawrence Livermore National Lab. (United States)
M. L. Carman, Lawrence Livermore National Lab. (United States)
Richard A. Torres, Lawrence Livermore National Lab. (United States)
Pamela K. Whitman, Lawrence Livermore National Lab. (United States)

Published in SPIE Proceedings Vol. 4347:
Laser-Induced Damage in Optical Materials: 2000
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; Keith L. Lewis; M. J. Soileau, Editor(s)

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