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Proceedings Paper

Analysis of bulk DKDP damage distribution, obscuration, and pulse-length dependence
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Paper Abstract

Recent LLNL experiments reported elsewhere at this conference explored the pulse length dependence of 351 nm bulk damage incidence in DKDP. The results found are consistent, in part, with a model in which a distribution of small bulk initiators is assumed to exist in the crystal, and the damage threshold is determined by reaching a critical temperature. The observed pulse length dependence can be explained as being set by the most probable defect capable of causing damage at a given pulse length. Analysis of obscuration in side illuminated images of the damaged region yields estimates of the damage site distributions that are in reasonable agreement with the distributions experimentally directly estimated.

Paper Details

Date Published: 12 April 2001
PDF: 6 pages
Proc. SPIE 4347, Laser-Induced Damage in Optical Materials: 2000, (12 April 2001); doi: 10.1117/12.425052
Show Author Affiliations
Michael D. Feit, Lawrence Livermore National Lab. (United States)
Alexander M. Rubenchik, Lawrence Livermore National Lab. (United States)
Michael J. Runkel, Lawrence Livermore National Lab. (United States)

Published in SPIE Proceedings Vol. 4347:
Laser-Induced Damage in Optical Materials: 2000
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; Keith L. Lewis; M. J. Soileau, Editor(s)

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