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Proceedings Paper

Ablation of amorphous SiO2 using ArF excimer laser
Author(s): Koichi Awazu
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Paper Abstract

Ablation from amorphous SiO2 (silica glass) was induced using ArF excimer laser. Threshold fluences of 2.5 J/cm2 was apparently necessary to commence ablation by a single pulse. Ablation was also observed after the number of pulses at below the threshold fluence. Microscopic structural change was examined with x-ray photoelectron spectroscopy, Raman spectroscopy, optical absorption spectroscopy in vacuum ultraviolet (vuv) region. A regular puckered four membered ring as well as Si3+ structure were introduced with irradiation. Repeat of flash heating and quenching by the pulse laser irradiation might generate regular puckered four membered rings and Si3+ species in silica glass. Increase of Si3+ concentration would reduce threshold fluence and number of pulse for ablation.

Paper Details

Date Published: 12 April 2001
PDF: 8 pages
Proc. SPIE 4347, Laser-Induced Damage in Optical Materials: 2000, (12 April 2001); doi: 10.1117/12.425011
Show Author Affiliations
Koichi Awazu, Electrotechnical Lab. (Japan)

Published in SPIE Proceedings Vol. 4347:
Laser-Induced Damage in Optical Materials: 2000
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; Keith L. Lewis; M. J. Soileau, Editor(s)

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