Share Email Print

Proceedings Paper

Simulation of transient temperature profiles during ELA and relation to process parameters
Author(s): Hidayat Kisdarjono; Apostolos T. Voutsas; Rajendra Solanki; Ashwini Kumar
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have developed excimer-laser-annealing modeling capability by broadening the computational ability of a standard finite-element based computational-fluid-dynamics software package to adopt to the specific demands of very rapid heating of thin a-Si films. This was achieved by the incorporation of a subroutine employing a phase function and a set of rules for determining latent heat absorption or release. Wit this enhancement the model was able to correctly calculate the degree of superheating/undercooling in the film and track the melt-solid interface velocity. The model also provided reasonable estimates of the expected poly-Si lateral growth length as a function of the laser irradiation scenario. The model in its current form is a useful tool for first order calculations and for supporting relevant experimental studies.

Paper Details

Date Published: 30 April 2001
PDF: 5 pages
Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424886
Show Author Affiliations
Hidayat Kisdarjono, Oregon Graduate Institute of Science and Technology (United States)
Apostolos T. Voutsas, Sharp Labs. of America, Inc. (United States)
Rajendra Solanki, Oregon Graduate Institute of Science and Technology (United States)
Ashwini Kumar, Fluent Inc. (United States)

Published in SPIE Proceedings Vol. 4295:
Flat Panel Display Technology and Display Metrology II
Edward F. Kelley; Edward F. Kelley; Apostolos T. Voutsas, Editor(s)

© SPIE. Terms of Use
Back to Top