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Proceedings Paper

Excimer-laser-crystallized poly-Si thin film transistors
Author(s): Dharam Pal Gosain
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Paper Abstract

Changing the TFT backplate from a glass to a plastic substrate will reduce the weight of a Flat Panel Display (FPD), but transparent plastic substrates are generally only temperature-resistant up to 125 degrees C. We have focused therefore on reducing the maximum processing temperature to 110 degrees C. Sputtered a-Si films are more suitable for laser crystallization on plastic, because they contain no hydrogen and can be crystallized by an excimer laser even if deposited at room temperature. We report high-quality poly- Si obtained by pulse laser crystallization on a plastic substrate coated with a buffer layer. A doping technique for source and drain compatible with a low temperature wide area substrate, based on excimer laser annealing, has been developed. The results of UV reflectivity, SEM, TEM, AFM, and Raman spectroscopy studies are summarized. Self-aligned top-gate TFTs fabricated on a plastic substrate at a substrate temperature of 110 degrees C are reported. Transistor field effect mobility of 250 cm2/V.s and a sub-threshold swing of 0.16 V/decade have been reported. Work on TFT s fabricate don plastic substrates is summarized.

Paper Details

Date Published: 30 April 2001
PDF: 9 pages
Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424866
Show Author Affiliations
Dharam Pal Gosain, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 4295:
Flat Panel Display Technology and Display Metrology II
Edward F. Kelley; Edward F. Kelley; Apostolos T. Voutsas, Editor(s)

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