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Proceedings Paper

Switch-on transient behavior in low-temperature polysilicon thin film transistors
Author(s): Nathan Bavidge; Mauro Boero; Piero Migliorato; Tatsuya Shimoda
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Paper Abstract

We report upon the measurement and simulation of the switch- on transient of polycrystalline silicon tin film transistors. The measurement of the switch-on transient reveals an unexpectedly long transient that cannot be explained by the theory adopted for single crystal silicon on simulator devices. In order to explain the experimental findings we have performed simulations of the transient and found that only when energy dependent cross sections are adopted do the calculations correctly reproduce the steady state and overshoot currents and also the transient duration. A physical interpretation of this phenomenon is presented, together with an analysis of the dependence of the transient upon the length of the channel and upon the source-drain voltage.

Paper Details

Date Published: 30 April 2001
PDF: 9 pages
Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424859
Show Author Affiliations
Nathan Bavidge, Univ. of Cambridge (United Kingdom)
Mauro Boero, Epson Cambridge Lab. (United Kingdom)
Piero Migliorato, Univ. of Cambridge and Epson Cambridge Lab. (United Kingdom)
Tatsuya Shimoda, Seiko Epson Corp. (Japan)


Published in SPIE Proceedings Vol. 4295:
Flat Panel Display Technology and Display Metrology II
Edward F. Kelley; Edward F. Kelley; Apostolos T. Voutsas, Editor(s)

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