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Proceedings Paper

Low-temperature polysilicon technology for active matrix addressing of LCDs and OLEDs
Author(s): Didier Pribat; Francois Plais
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Paper Abstract

Although it has been developed for more than a decade, low temperature polysilicon technology is far from being as mature as its amorphous silicon counterpart. This is due to much more complex processes, that are not used at all in related industrial areas, such as the microelectronics industry. In this paper, we first present the major critical process steps of the low temperature polysilicon technology, including laser crystallization and MOS-type oxide deposition. In a second part, we show that if high information content displays are to be fabricated with organic light emitting materials, they will certainly use a polysilicon active matrix, because of the inherent stability of this material.

Paper Details

Date Published: 30 April 2001
PDF: 8 pages
Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424857
Show Author Affiliations
Didier Pribat, Thomson-CSF (France)
Francois Plais, Thomson-CSF (France)


Published in SPIE Proceedings Vol. 4295:
Flat Panel Display Technology and Display Metrology II
Edward F. Kelley; Edward F. Kelley; Apostolos T. Voutsas, Editor(s)

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