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Proceedings Paper

Selectively oxidized vertical-cavity surface-emitting lasers for high-speed data communication
Author(s): Thomas Aggerstam; Anita Loevqvist; Renaud Stevens; Stefan Jonsson; Rickard M. von Wuertemberg; Richard Schatz; Mardjan Dubois; Marco Ghisoni
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Paper Abstract

MITEL Semiconductor is developing the next generation low cost, high performance transceivers for data communication. The increasing quantity of data being transferred over the Internet demands very high capacity interconnects. A low cost, high-performance alternative is the use of parallel fiber interconnects where the light is, for example, coupled into a 12channel fiber-ribbon. Parallel interconnects require good uniformity in order to reduce escalating costs and complexity. In this paper we report on the static and the modulation properties of 850nm multimode oxide VCSELs for use in such Gb/s transceiver system. Static power-current-voltage characteristics with good uniformity were obtained for different structures, with threshold currents down to sub-mA. A maximum small signal 3-dB bandwidth of 10 GHz and a modulation current efficiency up to 8.4 GHztsJ[rnA] were measured. Single channel results are presented for VCSELs operated at data rates from 2.5-10Gb/s.

Paper Details

Date Published: 4 May 2001
PDF: 6 pages
Proc. SPIE 4286, Vertical-Cavity Surface-Emitting Lasers V, (4 May 2001); doi: 10.1117/12.424794
Show Author Affiliations
Thomas Aggerstam, Mitel Semiconductor AB (Sweden)
Anita Loevqvist, Mitel Semiconductor AB (Sweden)
Renaud Stevens, Royal Institute of Technology (Sweden)
Stefan Jonsson, Mitel Semiconductor AB (Sweden)
Rickard M. von Wuertemberg, Mitel Semiconductor AB (Sweden)
Richard Schatz, Royal Institute of Technology (Sweden)
Mardjan Dubois, Mitel Semiconductor AB (Sweden)
Marco Ghisoni, Mitel Semiconductor AB (Sweden)


Published in SPIE Proceedings Vol. 4286:
Vertical-Cavity Surface-Emitting Lasers V
Kent D. Choquette; Chun Lei, Editor(s)

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