Share Email Print

Proceedings Paper

Quest for very high speed VCSELs: pitfalls and clues
Author(s): Renaud Stevens; Richard Schatz; Anita Lovqvist; Thomas Aggerstam; Christina Carlsson; Carlos Angulo Barrios; Sebastian Lourdudoss; Marco Ghisoni
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present an approach for systematic high-speed characterization of VCSELs and discuss both its potential benefits and problems. We show how the VCSEL dynamics, under certain conditions, can be well described by a small number of key parameters that can be extracted from measurements and used for further optimization. The calibrated small signal modulation responses of the laser are measured and fitted to an analytical transfer function allowing the estimation of the resonance frequency, damping factor and parasitic cut-off at different bias points. From this data the relative importance of different bandwidth limiting effects due to damping, thermal heating and parasitics can be deducted. We illustrate the approach on 850nm datacom VCSELs using either ion implantation, selective oxidation or semi-insulating regrowth for current confinement. The bandwidth ofthe implanted device appears to be limited by parasitics effects to 3.3GHz. Due to a much smaller injection diameter, the oxidized VCSEL reaches 10GHz, being mainly limited by the high damping. Finally the regrown VCSEL operates up to 5GHz, limited by the parasitics

Paper Details

Date Published: 4 May 2001
PDF: 9 pages
Proc. SPIE 4286, Vertical-Cavity Surface-Emitting Lasers V, (4 May 2001); doi: 10.1117/12.424792
Show Author Affiliations
Renaud Stevens, Royal Institute of Technology (Sweden)
Richard Schatz, Royal Institute of Technology (Sweden)
Anita Lovqvist, Mitel Semiconductor AB (Sweden)
Thomas Aggerstam, Mitel Semiconductor AB (Sweden)
Christina Carlsson, Chalmers Univ. of Technology (Sweden)
Carlos Angulo Barrios, Royal Institute of Technology (Sweden)
Sebastian Lourdudoss, Royal Institute of Technology (Sweden)
Marco Ghisoni, Mitel Semiconductor AB (Sweden)

Published in SPIE Proceedings Vol. 4286:
Vertical-Cavity Surface-Emitting Lasers V
Kent D. Choquette; Chun Lei, Editor(s)

© SPIE. Terms of Use
Back to Top