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Proceedings Paper

Polymer-based optical amplifiers for operation at 1.55 um
Author(s): Gauri V. Karve; Bipin Bihari; Ray T. Chen; Sridhar Govindraju; Scott Baumann; R. Bleiler
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Paper Abstract

Erbium doped polymer waveguide amplifier for operation at 1.55 micrometers was studied. A fluorinated polyimide was doped with Er ions using ion implantation. The samples were irradiated at room temperature by 320 keV Er2+ and 160 keV Er+ ions. Doses used were 1 by 1015/cm2 and 1 by 1014/cm2 respectively. The implanted samples were characterized using Rutherford Backscattering and SIMS analysis. The implanted ion profile was nearly Gaussian with range of 0.25 micrometers for the 320 keV implant and 0.12 micrometers for the 160 keV implant. A Gaussian implanted ion profile, matched with the electric field profile of the waveguide mode, can enhance the efficiency of energy transfer between the waveguide mode and the active ions. The implant depth of Er in polyimide at the energies used is shallow. In order to achieve the overlap with the electric field profile, a two layer waveguide amplifier structure is proposed. Such doping and waveguide fabrication techniques are compatible with the existing silicon technology.

Paper Details

Date Published: 27 April 2001
PDF: 7 pages
Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); doi: 10.1117/12.424786
Show Author Affiliations
Gauri V. Karve, Univ. of Texas at Austin (United States)
Bipin Bihari, Univ. of Texas at Austin (United States)
Ray T. Chen, Univ. of Texas at Austin (United States)
Sridhar Govindraju, Univ. of Texas at Austin (United States)
Scott Baumann, Evans Analytical Group (United States)
R. Bleiler, Evans Analytical Group (United States)

Published in SPIE Proceedings Vol. 4282:
Rare-Earth-Doped Materials and Devices V
Shibin Jiang, Editor(s)

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