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Proceedings Paper

Erbium-activated monolithic silica xerogels and silica-titania planar waveguides: optical and spectroscopic characterization
Author(s): Luca Zampedri; Cristiana Tosello; Flavio Rossi; Sabina Ronchin; Raffaella Rolli; Maurizio Montagna; Alessandro Chiasera; Giancarlo C. Righini; Stefano Pelli; Andre Monteil; Stephane Chaussedent; Christope Bernard; Claire Duverger; Maurizio Ferrari; Cristina Armellini
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Paper Abstract

Recent results obtained for Er2O3-SiO2 monolithic xerogels and erbium activated SiO2-TiO2 planar waveguides are presented. Monolithic erbium-activated silica xerogels with erbium content ranging from 0 up to 40000 ppm were prepared by the sol-gel technique. Samples were densified by thermal treatment in air at 950 degrees C for 120 hours. The densification degree and the relative content of hydroxyl groups were studied by NIR absorption and Raman spectroscopies. Emission at 1.5 micrometers , characteristic of the 4I13/2 yields 4I15/2 transition of Er3+ ions, was observed at room temperature for all monolithic samples upon continuous wave excitation at 980 nm. For the 5000 Er/Si ppm doped xerogel, an intense photoluminescence was observed with a lifetime of 8 ms for the metastable 4I13/2 level. Passive and erbium-activated SiO2-TiO2 planar waveguides, monomode at 632.8 nm, were prepared by a dip-coating technique. Some parameters such as H2O content, intermediate and final thermal treatments, and the molar ratio TiO2/SiO2 were modified during the preparation of the solution in order to minimize the final content of residual hydroxyl groups and the phase separation between silica and titania. Raman spectroscopy was used to check the structural properties of the waveguides. A lifetime of 7 ms was measured for the metastable 4I13/2 level in a 93SiO2-7TiO2 planar waveguide activated by 10000 ppm Er/(Si + Ti). The best value of the attenuation coefficient was of 0.5 dB/cm at 632.8 nm.

Paper Details

Date Published: 27 April 2001
PDF: 10 pages
Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); doi: 10.1117/12.424777
Show Author Affiliations
Luca Zampedri, Univ. degli Studi di Trento (Italy)
Cristiana Tosello, Univ. degli Studi di Trento (Italy)
Flavio Rossi, Univ. degli Studi di Trento (Italy)
Sabina Ronchin, Univ. degli Studi di Trento (Italy)
Raffaella Rolli, Univ. degli Studi di Trento (Italy)
Maurizio Montagna, Univ. degli Studi di Trento (Italy)
Alessandro Chiasera, Univ. degli Studi di Trento (Italy)
Giancarlo C. Righini, Istituto di Ricerca sulle Onde Elettromagnetiche (Italy)
Stefano Pelli, Istituto di Ricerca sulle Onde Elettromagnetiche (Italy)
Andre Monteil, Univ. d'Angers (France)
Stephane Chaussedent, Univ. d'Angers (France)
Christope Bernard, Univ. d'Angers (France)
Claire Duverger, Univ. du Maine (France)
Maurizio Ferrari, Ctr. di Fisica degli Stati Aggregati (Italy)
Cristina Armellini, Ctr. di Fisica degli Stati Aggregati (Italy)


Published in SPIE Proceedings Vol. 4282:
Rare-Earth-Doped Materials and Devices V
Shibin Jiang, Editor(s)

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