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Proceedings Paper

Growth, crystallization, and room temperature photoluminescence of Er2O3 thin films
Author(s): Kevin M. Chen; Sajan Saini; Michal Lipson; Xiaoman Duan; Lionel C. Kimerling
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Paper Abstract

Room temperature photoluminescence (RT PL) has been obtained from Er2O3 thin films fabricated via reactive sputtering of Er metal in Ar/O2 and subsequently annealed. Upon annealing, the PL spectra develop maxima at 1549 nm and 1541 nm for films treated at 650 degrees C and 1020 degrees C, respectively. Crystallization at high temperature results in RT PL and a lifetime of approximately 10 ms at 4K.

Paper Details

Date Published: 27 April 2001
PDF: 6 pages
Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); doi: 10.1117/12.424773
Show Author Affiliations
Kevin M. Chen, Massachusetts Institute of Technology (United States)
Sajan Saini, Massachusetts Institute of Technology (United States)
Michal Lipson, Massachusetts Institute of Technology (United States)
Xiaoman Duan, Massachusetts Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 4282:
Rare-Earth-Doped Materials and Devices V
Shibin Jiang, Editor(s)

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