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Proceedings Paper

Controlling the quantum effects and erbium-carrier interaction using Si/SiO2 superlattices
Author(s): Jung H. Shin; Ji-Hong Jhe; WonHee Lee; YongHo Ha; DaeWon Moon
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Paper Abstract

The Er3+ luminescent properties of Er-doped Si/SiO2 superlattices are investigated. The superlattices were deposited either by electron cyclotron resonance plasma enhanced chemical vapor deposition or by ultra-high vacuum ion beam sputter deposition method and subsequently annealed at 950 degrees C. The thickness of the layers was varied 0.6 to 4.8 nm, and location of Er controlled within sub-nm. The structure and the composition of the films were confirmed using transmissions electron microscopy and medium energy ion spectroscopy. By carefully controlling the Si and SiO2 layer thickness and the locations of Er, we demonstrate several orders of magnitude enhancement of Er3+ luminescence and suppression of de-excitation mechanisms. We also demonstrate fabrication of waveguides using Er-doped Si/SiO2 superlattices, and discuss implications for possible applications.

Paper Details

Date Published: 27 April 2001
PDF: 11 pages
Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); doi: 10.1117/12.424770
Show Author Affiliations
Jung H. Shin, Korea Advanced Institute of Science and Technology (South Korea)
Ji-Hong Jhe, Korea Advanced Institute of Science and Technology (South Korea)
WonHee Lee, Korea Advanced Institute of Science and Technology (South Korea)
YongHo Ha, Korea Research Institute of Standards and Science (South Korea)
DaeWon Moon, Korea Research Institute of Standards and Science (South Korea)


Published in SPIE Proceedings Vol. 4282:
Rare-Earth-Doped Materials and Devices V
Shibin Jiang, Editor(s)

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