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Proceedings Paper

Combinatorial methodology for optimizing oxide/semiconductor interface with atomic interfacial layers
Author(s): Toyohiro Chikyow; Parhat Ahmet; Kiyomi Nakajima; Takashi Koida; Masahiro Takakura; Mamoru Yoshimoto; Hideomi Koinuma
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Paper Abstract

A combinatorial methodology was employed to investigate oxide materials/semiconductor interfaces for future devices. For this purpose, a temperature gradient pulsed laser deposition to find optimum growth condition and transmission electron microscopy for structure and composition analysis were used. Newly proposed the "micro sampling method" with focused ion beam was applied to fabricate the specimen from the interested region in a shorter term. In growing oxide materials on Si substrate, a proper termination was found to be inevitable for avoiding surface oxidation. Arsenic was used to obtain a durable surface of Si in oxygen atmosphere. CeO2 and SrTiO3 were tried to grow and the interfaces were characterized using these method.

Paper Details

Date Published: 23 April 2001
PDF: 16 pages
Proc. SPIE 4281, Combinatorial and Composition Spread Techniques in Materials and Device Development II, (23 April 2001); doi: 10.1117/12.424754
Show Author Affiliations
Toyohiro Chikyow, National Institute for Research in Inorganic Materials and National Research Institute for (Japan)
Parhat Ahmet, National Institute for Research in Inorganic Materials (Japan)
Kiyomi Nakajima, National Institute for Research in Inorganic Materials (Japan)
Takashi Koida, Tokyo Institute of Technology (Japan)
Masahiro Takakura, Tokyo Institute of Technology (Japan)
Mamoru Yoshimoto, Tokyo Institute of Technology (Japan)
Hideomi Koinuma, National Institute for Research in Inorganic Materials and Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 4281:
Combinatorial and Composition Spread Techniques in Materials and Device Development II
Ghassan E. Jabbour; Hideomi Koinuma, Editor(s)

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