Share Email Print

Proceedings Paper

Phonon lifetimes and decay channels in single-crystalline bulk AlN
Author(s): Martin Kuball; J. M. Hayes; Ying Shi; James H. Edgar
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report on the Raman analysis of the phonon lifetimes and decay channels of the A1(LO) and E2(high) phonons of single-crystalline bulk AlN grown using the sublimation- recondensation method. The temperature dependence of the phonon lifetimes was investigated from 10 K to 1275 K. Lifetimes of the A1(LO) phonon and the E2(high) phonon of 0.75 ps and 2.9 ps, respectively, were measured at 10 K. Our experimental results show that the A1(LO) phonons of AlN decay primarily into two phonons of equal energy (Klemens' decay channel), most likely longitudinal- acoustic phonons. AlN is therefore in great contrast to GaN, where a symmetric decay of the A1(LO) phonon is not possible due to a large energy gap between the acoustic and optical phonon branches. For the E2(high) phonon, we find an asymmetric phonon decay. Contributions from two- and three-phonon decay channels were used for the modeling of the temperature dependence of the E2(high) phonon lifetime. Phonon lifetimes and decay channels of the E1(LO), A1(TO) and E1(TO) phonons of AlN were also investigated.

Paper Details

Date Published: 23 April 2001
PDF: 11 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424745
Show Author Affiliations
Martin Kuball, Univ. of Bristol (United Kingdom)
J. M. Hayes, Univ. of Bristol (United Kingdom)
Ying Shi, Kansas State Univ. (United States)
James H. Edgar, Kansas State Univ. (United States)

Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

© SPIE. Terms of Use
Back to Top