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Proceedings Paper

Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors
Author(s): Yoichi Kawakami; Kunimichi Omae; Akio Kaneta; Koichi Okamoto; Tomoaki Izumi; Shin Saijou; Kenichi Inoue; Yukio Narukawa; Takashi Mukai; Shigeo Fujita
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Paper Abstract

Recombination dynamics of spontaneous and stimulated emissions have been assessed in InGaN-based light emitting diodes (LEDs) and laser diodes (LDs), by employing time- resolved photoluminescence and pump and probe spectroscopy. As for an In0.02Ga0.98N-ultraviolet-LED, excitons are weakly localized by 15 meV at low temperature, but they become almost free at room temperature. It was found that addition of small amount of In results in the reduction of nonradiative recombination centers originating from point defects. The internal electric field does exist in InGaN active layers, and induces a large modification of excitonic transitions. However, it alone does not explain the feature of spontaneous emission observed in an In0.3Ga0.7N- blue-LED such as an anomalous temperature dependent of peak energy, almost temperature independence of radiative lifetimes and mobility-edge type behavior, indicating an important role of exciton localization.

Paper Details

Date Published: 23 April 2001
PDF: 13 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424742
Show Author Affiliations
Yoichi Kawakami, Kyoto Univ. (Japan)
Kunimichi Omae, Kyoto Univ. (Japan)
Akio Kaneta, Kyoto Univ. (Japan)
Koichi Okamoto, Kyoto Univ. (Japan)
Tomoaki Izumi, Kyoto Univ. (Japan)
Shin Saijou, Kyoto Univ. (Japan)
Kenichi Inoue, Kyoto Univ. (Japan)
Yukio Narukawa, Nichia Corp. (Japan)
Takashi Mukai, Nichia Corp. (Japan)
Shigeo Fujita, Kyoto Univ. (Japan)

Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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