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Proceedings Paper

Growth and optoelectronic properties of III-nitride quaternary alloys
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Paper Abstract

InxAlyGa1-xN quaternary alloys with different In and Al composites were grown on sapphire substrates with GaN buffer by metal-organic chemical vapor deposition. Optical properties of these quaternary alloys were studied by picosecond time-resolved photoluminescence. Our studies have revealed that InxAlyGa1-xN quaternary alloys with lattice matched with GaN (y approximately 4.7x) have the highest optical quality. More importantly, we can achieve not only higher emission energies but also higher emission intensities (or quantum efficiencies) in InxAlyGa1-x-yN quaternary alloys than that of GaN.

Paper Details

Date Published: 23 April 2001
PDF: 9 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424740
Show Author Affiliations
Jing Li, Kansas State Univ. (United States)
Ki-Bum Nam, Kansas State Univ. (United States)
KyoungHoon Kim, Kansas State Univ. (United States)
Tom Nelson Oder, Kansas State Univ. (United States)
H. J. Jun, Kansas State Univ. (United States)
Jing Yu Lin, Kansas State Univ. (United States)
Hongxing Jiang, Kansas State Univ. (United States)


Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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