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Proceedings Paper

Indium segregation in InGaN/GaN quantum well structures
Author(s): Chih Chung Yang; Shih-Wei Feng; Yen-Sheng Lin; Yung-Chen Cheng; Chi-Chih Liao; Chin-Yi Tsai; Kung-Jeng Ma; Jen-Inn Chyi
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Paper Abstract

Indium segregation in InGaN is a crucial phenomenon controlling the optical characteristics of such a compound. Its formation is a natural process due to the large lattice mismatch between InN and GaN. In InGaN, indium compositional fluctuations and phase separated InN clusters can be observed, particularly when the nominal indium content is high. In this paper, we report the results of material characterization, including X-ray diffraction, high- resolution transmission electron microscopy, atomic force microscopy, etc., and optical studies, including photo- luminescence and stimulated emission.

Paper Details

Date Published: 23 April 2001
PDF: 7 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424737
Show Author Affiliations
Chih Chung Yang, National Taiwan Univ. (Taiwan)
Shih-Wei Feng, National Taiwan Univ. (Taiwan)
Yen-Sheng Lin, Chung Cheng Institute of Technology (Taiwan)
Yung-Chen Cheng, National Taiwan Univ. (Taiwan)
Chi-Chih Liao, National Taiwan Univ. (Taiwan)
Chin-Yi Tsai, National Taiwan Univ. and De Montford Univ. (United Kingdom)
Kung-Jeng Ma, Chung Cheng Institute of Technology (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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