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Proceedings Paper

Control of low-temperature-grown GaAs for ultrafast switching applications
Author(s): Valentin Ortiz; Max Stellmacher; Xavier Marcadet; Stephane Formont; Didier Adam; Julien Nagle; Jean-Francois Lampin; Antigoni Alexandrou
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Paper Abstract

The dynamic properties of low-temperature-grown GaAs (LT- GaAs) depend critically on growth and annealing conditions, such as substrate temperature during the MBE process (Ts), annealing temperature (Ta) and duration ((tau) a). Previous empirical models based on carrier rate- equations introduce parameters, such as carrier lifetime, that cannot be directly correlated with growth and annealing conditions. The Schockley-Read-Hall model we use here introduces deep donor (NDD) and acceptor (NA) concentrations, instead of lifetimes. In LT-GaAs, deep donors are in majority constituted by an As-antisite related defect. The acceptors, in absence of doping, are most likely constituted either by Ga vacancy defects or by the residual doping during MBE growth. The samples studied are grown on GaAs semi-insulating substrates at different Ts and annealed under different conditions. For each sample, we first measure NDD using X-ray diffraction analysis. Then we fit both continuous photoconductivity and pump-probe reflectometry measurements using NA as the only adjustable parameter. From the set of data obtained, we can relate Ts, Ta and (tau) a with NDD and NA. This gives us a way to predict LT-GaAs dynamics from growth and annealing continues. This approach has been used to fabricate ultrafast photoconductive switches showing high sensitivity and good insulation.

Paper Details

Date Published: 23 April 2001
PDF: 9 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424736
Show Author Affiliations
Valentin Ortiz, THALES (France)
Max Stellmacher, THALES (France)
Xavier Marcadet, THALES (France)
Stephane Formont, THALES (France)
Didier Adam, THALES (France)
Julien Nagle, THALES (France)
Jean-Francois Lampin, Ecole Polytechnique (France)
Antigoni Alexandrou, Ecole Polytechnique (France)

Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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