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Proceedings Paper

Femtosecond-scale response of semiconductors to laser pulses
Author(s): Roland E. Allen; Andrea Burzo; Traian Dumitrica
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Paper Abstract

We report simulations of the response of InSb, GaAs, and Si to 70-femtosecond laser pulses of various intensities. In agreement with the experiments of Mazur and coworkers, and other groups, there is a nonthermal phase transition for each of these semiconductors above a threshold intensity. Our simulations employ tight-binding electron-ion dynamics (TED), a technique which is briefly described in the text. In the experimental pump-probe observations, the dielectric function (epsilon) ((omega) ) and the second-order susceptibility (chi) (2) can be measured. These same quantities can be calculated during a TED simulation, and there is good agreement in the behavior with respect to both time and frequency. The simulations provide much additional microscopic information which is experimentally inaccessible: for example, the time-dependence of the atomic pair-correlation function, electronic energy bands, occupancies of excited states, kinetic energy of the atoms, and excursions of atoms from their initial positions.

Paper Details

Date Published: 23 April 2001
PDF: 15 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424727
Show Author Affiliations
Roland E. Allen, Texas A&M Univ. (United States)
Andrea Burzo, Texas A&M Univ. (United States)
Traian Dumitrica, Texas A&M Univ. (United States)


Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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