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Proceedings Paper

Hot phonon effects on the ultrafast relaxation of photoexcited electrons in AlN
Author(s): Mohamed A. Osman
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Paper Abstract

The effects of hot phonons on the ultrafast relaxation of photoexcited electrons in AlN has been investigated using ensemble Monte Carlo approach. The electrons are excited using infra-red laser pulses with different densities and energies. The build-up and decay of the hot phonon distribution at several phonon wavevectors is examined. The strong polar optical phonon scattering rates coupled with the short lifetimes of A(LO) leads to quick decay of the hot phonon distributions. Additionally, the rapid electron- electron scattering leads to fast thermalization of the carrier distributions.

Paper Details

Date Published: 23 April 2001
PDF: 5 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424725
Show Author Affiliations
Mohamed A. Osman, Washington State Univ. (United States)


Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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