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Proceedings Paper

Nonequilibrium electron distributions and energy loss rate in InxGa1-xAs1-yNy studied by picosecond Raman spectroscopy
Author(s): Y. Chen; Kong-Thon F. Tsen
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Paper Abstract

Non-equilibrium electron distributions and energy loss rate in a MOCVD-grown InxGa1-xAs1-yNy (x equals 0.03 and y equals 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n approximately equals 1018 cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Paper Details

Date Published: 23 April 2001
PDF: 13 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424724
Show Author Affiliations
Y. Chen, Arizona State Univ. (United States)
Kong-Thon F. Tsen, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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