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Proceedings Paper

Femtosecond pump-probe spectroscopy of a highly excited GaN epilayer
Author(s): Chan-Kyung Choi; Yong Hwang Kwon; Jerzy S. Krasinski; Gil-Han Park; Girish Setlur; Jin-Joo Song; Yia-Chung Chang
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Paper Abstract

The non-equilibrium carrier dynamics in GaN epilayer for carrier densities ranging from 4 X 1017 to 1019 cm-3 at 10 K was studied by femtosecond pump-probe transmission spectroscopy. Spectral hole burning was initially peaked roughly at the excitation energy for an estimated carrier density of 4 X 1018 cm-3 and gradually redshifted during the excitation. Because of reduced carrier-carrier and carrier-phonon scattering, a very slow energy relaxation of the hot carriers at these densities were observed. We show that the hot carriers were strongly confined in a non-thermal distribution and they relaxed collectively to the band edge.

Paper Details

Date Published: 23 April 2001
PDF: 7 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424723
Show Author Affiliations
Chan-Kyung Choi, Oklahoma State Univ. (United States)
Yong Hwang Kwon, Oklahoma State Univ. (United States)
Jerzy S. Krasinski, Oklahoma State Univ. (United States)
Gil-Han Park, Oklahoma State Univ. (United States)
Girish Setlur, Oklahoma State Univ. (United States)
Jin-Joo Song, Oklahoma State Univ. (United States)
Yia-Chung Chang, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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