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Proceedings Paper

Growth and characterization of Tm,Ho-doped LuLiF4 and YLiF4 crystals
Author(s): Vikas Sudesh; Kazuhiro Asai; Akihito Kudou; Kazushige Ito; Kiyoshi Shimamura; Tsuguo Fukuda
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Paper Abstract

Several Tm,Ho-doped LuLF and YLF crystals were grown using the Czochralski method. Crystals were pulled in a furnace with atmospheric control system. Pulling and rotation rates were 1 mm/hr and 15 rpm, respectively. High purity (>= 99.99%) fluorides were used as starting materials. High vacuum (approximately equals 10-5 torr) prior to the growth and CF4 gas during the growth were applied. Single crystals of up to 20 mm in diameter and 80 mm in length were successfully grown. Various laser rods of sizes 4 X 3 X 2.7 mm3 were prepared from the grown crystal boules. The crystal ends were Brewster- cut to minimize the reflection losses inside the cavity. Two quasi-CW LD-arrays of 6 X 60 W each side-pump the crystals. The pump beam is focused using two lens ducts of length 64 mm to a waist of 2.5 X 2.5 mm2. The nearly hemispherical laser cavity is formed by a flat high reflector and a 300 mm radius of curvature 5% transmission output coupler. At room temperature, up to 13.5 mJ (9.9 mJ) with a slope efficiency of 10.5% (7.5%) has been demonstrated at 1 Hz for 5% Tm, 0.5% Ho:LuLF (5% Tm, 0.5% Ho:YLF).

Paper Details

Date Published: 1 May 2001
PDF: 8 pages
Proc. SPIE 4268, Growth, Fabrication, Devices, and Applications of Laser and Nonlinear Materials, (1 May 2001); doi: 10.1117/12.424638
Show Author Affiliations
Vikas Sudesh, Tohoku Univ. (United States)
Kazuhiro Asai, Tohoku Institute of Technology (Japan)
Akihito Kudou, Pax Inc. (Japan)
Kazushige Ito, Tohoku Univ. (Japan)
Kiyoshi Shimamura, Tohoku Univ. (Japan)
Tsuguo Fukuda, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 4268:
Growth, Fabrication, Devices, and Applications of Laser and Nonlinear Materials
Jeffrey W. Pierce; Kathleen I. Schaffers; Kathleen I. Schaffers, Editor(s)

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