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Proceedings Paper

X-ray micromachining of high-aspect-ratio MEMS using SU8 ultrathick photoresist
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Paper Abstract

In this work, a negative-tone photoresist, SU8, used in UV- based micromachining of high-aspect-ratio MEMS has been tested using proximity X-ray printing. Very thick (a few hundreds of micrometers) SU8 resist layers were processed with standard cleanroom equipment and exposed with 1 - 10 keV X-rays at a beamline of the CAMD synchrotron radiation facility. It showed a large increase in sensitivity in deep X-ray lithography compared to the standard poly(methyl-methacrylate) (PMMA) resist, resulting in increased throughput potential. Resist microstructures with aspect-ratio as high as 50 (height 350 : width 7) and vertical sidewalls, were produced. The benefits of using such X-ray resist in X-ray manufacturing are discussed.

Paper Details

Date Published: 6 April 2001
PDF: 8 pages
Proc. SPIE 4234, Smart Materials, (6 April 2001); doi: 10.1117/12.424425
Show Author Affiliations
Chantal G. Khan Malek, Univ. Paris-Sud and Louisiana State Univ. (France)

Published in SPIE Proceedings Vol. 4234:
Smart Materials
Alan R. Wilson; Hiroshi Asanuma, Editor(s)

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