Share Email Print

Proceedings Paper

Characterization of nanocrystalline silicon films
Author(s): Hongyi Lin; Jinhua Liu; Bo Liao; Daoming Yang; Yue Wang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The hydrogenated nanocrystalline silicon (nc-Si:H) films have attracted an extensive attention for their novel structure and peculiar properties. The nc-Si:H films are prepared by the high purity hydrogen highly diluted silane as the reactive gases which are activated at r.f. and d.c. double power sources, in a conventional plasma enhanced chemical vapor deposition (PECVD) system. The film samples have been studied by high-resolution electron microscopy (HREM), Raman scattering spectroscopy. Based on the dynamics analysis of the fabrication process of the nc-Si:H films, a fractal growth model which is called diffusion and reaction limited aggregation (DRLA) model was proposed. It is shown that the results of the computer simulation agree with the experimental results.

Paper Details

Date Published: 6 April 2001
PDF: 5 pages
Proc. SPIE 4234, Smart Materials, (6 April 2001); doi: 10.1117/12.424420
Show Author Affiliations
Hongyi Lin, Beijing Institute of Technology (China)
Jinhua Liu, Peking Univ. (China)
Bo Liao, Beijing Institute of Technology (China)
Daoming Yang, Beijing Institute of Technology (China)
Yue Wang, Beijing Institute of Technology (China)

Published in SPIE Proceedings Vol. 4234:
Smart Materials
Alan R. Wilson; Hiroshi Asanuma, Editor(s)

© SPIE. Terms of Use
Back to Top