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Proceedings Paper

Difficulties making reliability predictions for Si, GaAs, and InP
Author(s): Grady S. White; Linda M. Braun
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Paper Abstract

The lifetime prediction model that has been developed for brittle materials implicitly assumes an initial flaw population from which, under the influence of an applied or residual stress, cracks grow to failure. The relationship between crack growth rate and stress intensity factor is assumed to be a power law expression. While the tests used to predict lifetimes, i.e., Weibull distribution, inert strength, and dynamic fatigue, can all be applied to semiconductors without apparent discrepancies, analysis of the crack growth behavior in Si, GaAs, and InP shows that assumptions in the lifetime model are violated for these materials. Consequently, lifetime predictions based upon this model will be wrong.

Paper Details

Date Published: 16 April 2001
PDF: 9 pages
Proc. SPIE 4215, Optical Fiber and Fiber Component Mechanical Reliability and Testing, (16 April 2001); doi: 10.1117/12.424363
Show Author Affiliations
Grady S. White, National Institute of Standards and Technology (United States)
Linda M. Braun, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 4215:
Optical Fiber and Fiber Component Mechanical Reliability and Testing
M. John Matthewson, Editor(s)

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