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Proceedings Paper

New graded band gap channel MOSFET for low-noise and gigahertz applications
Author(s): Ali Abou-Elnour; Hamdi Abdelhamed; Adel El-Henawy; Ossama A. Abo-Elnor
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Paper Abstract

A new graded band gap channel MOSFET is suggested to make use of the improved electrical properties of SiGe over Si at high frequencies of operation. The device performance is analyze by using an analytical model and the obtained results are compared with those of conventional Si and non- uniform doped channel MOSFETs. Finally, the noise behavior of the new MOSFET is investigated to show its superior performance over conventional Si MOSFETs at GHZ frequencies of operation.

Paper Details

Date Published: 18 December 2000
PDF: 9 pages
Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); doi: 10.1117/12.422166
Show Author Affiliations
Ali Abou-Elnour, Ajman Univ. for Science and Technology (United Arab Emirates)
Hamdi Abdelhamed, High Institute of Technology (Egypt)
Adel El-Henawy, King Fisal Univ. (Egypt)
Ossama A. Abo-Elnor, Ajman Univ. for Science and Technology (Egypt)


Published in SPIE Proceedings Vol. 4111:
Terahertz and Gigahertz Electronics and Photonics II
R. Jennifer Hwu; Ke Wu, Editor(s)

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