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Proceedings Paper

Sb-heterostructure zero-bias diodes for direct detection beyond 100 GHz
Author(s): Joel N. Schulman; David H. Chow; Edward T. Croke; Carl W. Pobanz; Howard L. Dunlap; C. D. Haeussler
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Paper Abstract

We have developed a new kind of millimeter wave diode for zero-bias detection up to and beyond 100GHz. The diode is based on the InAs/GaSb/AlSb heterostructure, which has a staggered Type II band gap alignment in which the conduction band of the InAs is lower in energy than the GaSb valence band edge. This produces a built-in asymmetry which produces a high zero bias nonlinearity in the current-voltage characteristic. The heterostructure is a relatively simple one that is reliably and reproducibly grown using standard molecular beam epitaxy techniques. The diodes we have fabricated demonstrate that this is a new and superior solution as compared with its predecessors, the Ge backward diode and the planar doped barrier diode, for detection and mixing of small input power-level signals without the added complexity of DC bias or local oscillator.

Paper Details

Date Published: 18 December 2000
PDF: 6 pages
Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); doi: 10.1117/12.422149
Show Author Affiliations
Joel N. Schulman, HRL Labs., LLC (United States)
David H. Chow, HRL Labs., LLC (United States)
Edward T. Croke, HRL Labs., LLC (United States)
Carl W. Pobanz, Broadcom Corp. (United States)
Howard L. Dunlap, HRL Labs., LLC (United States)
C. D. Haeussler, HRL Labs., LLC (United States)


Published in SPIE Proceedings Vol. 4111:
Terahertz and Gigahertz Electronics and Photonics II
R. Jennifer Hwu; Ke Wu, Editor(s)

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