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Proceedings Paper

GaN-based terahertz sources
Author(s): Vladimir I. Litvinov; Vladimir A. Manasson; Lev S. Sadovnik
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Paper Abstract

We discuss possible new sub-millimeter sources based on group-III Nitrides superlattices. It is shown that traveling dipole domains in biased GaN/InGaN and GaN/AlGaN short- period superlattices can generate electromagnetic power in the terahertz region.

Paper Details

Date Published: 18 December 2000
PDF: 8 pages
Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); doi: 10.1117/12.422138
Show Author Affiliations
Vladimir I. Litvinov, WaveBand Corp. (United States)
Vladimir A. Manasson, WaveBand Corp. (United States)
Lev S. Sadovnik, WaveBand Corp. (United States)


Published in SPIE Proceedings Vol. 4111:
Terahertz and Gigahertz Electronics and Photonics II
R. Jennifer Hwu; Ke Wu, Editor(s)

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