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Proceedings Paper

Near-field millimeter-wave injection and its application in probing of high-frequency devices
Author(s): Harold R. Fetterman; Mohammed Ershad Ali; Kandadai S. Ramesh; Talal Azfar; Dwight C. Streit; Seok K. Han; Kwang Y. Kang
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Paper Abstract

A novel technique, that combines optical heterodyning and near-field optics, was developed for highly localized of millimeter waves in ultrafast devices. The technique relies on evanescent coupling of the interfering laser to a small are of the device, by means of a near-field fiber optic probe. The applicability of the technique was first validated by measurements on heterojunction photo transistors up to 100GHz. Later, scanned measurements at 63GHz were performed on two ultrafast device structures, namely low temperature GaAs photoconductive switches and InP-based high electron mobility transistors. The response characteristics were rich in structures that revealed important details of the device dynamics.

Paper Details

Date Published: 18 December 2000
PDF: 10 pages
Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); doi: 10.1117/12.422131
Show Author Affiliations
Harold R. Fetterman, Univ. of California/Los Angeles (United States)
Mohammed Ershad Ali, Univ. of California/Los Angeles (United States)
Kandadai S. Ramesh, Univ. of California/Los Angeles (United States)
Talal Azfar, Univ. of California/Los Angeles (United States)
Dwight C. Streit, TRW Space & Electronics Group (United States)
Seok K. Han, Korea Advanced Institute of Science and Technology (South Korea)
Kwang Y. Kang, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4111:
Terahertz and Gigahertz Electronics and Photonics II
R. Jennifer Hwu; Ke Wu, Editor(s)

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