Share Email Print

Proceedings Paper

Concentration and power dependencies of level population of 2.8-um laser transition in YLF:Er crystals under cw laser diode pumping
Author(s): Alexandra M. Tkachuk; Irene K. Razumova; A. A. Mirzaeva; Georgii E. Novikov; O. A. Orlov; A. V. Malyshev; V. P. Gapontsev
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

An influence of inter-ionic cross relaxation processes (up- conversion, self-quenching) on concentration and power dependence's of the inverse population of 4I11/2 and 4I13/2 laser levels in YLF:Er crystals under CW laser-diode pumping were studied both theoretically and experimentally. Computer simulations were carried out taking into account not only pair interaction but also the multi-ion interaction in the whole system. Optimal Er concentration for 3-micrometers CW lasing was estimated as 10- 15%.

Paper Details

Date Published: 23 March 2001
PDF: 6 pages
Proc. SPIE 4350, Laser Optics 2000: Solid State Lasers, (23 March 2001); doi: 10.1117/12.420947
Show Author Affiliations
Alexandra M. Tkachuk, S.I. Vavilov State Optical Institute (Russia)
Irene K. Razumova, S.I. Vavilov State Optical Institute (Russia)
A. A. Mirzaeva, Institute of Laser Physics (Russia)
Georgii E. Novikov, Institute of Laser Physics (Russia)
O. A. Orlov, Institute of Laser Physics (Russia)
A. V. Malyshev, A.I. Ioffe Physico-Technical Institute (Russia)
V. P. Gapontsev, IPG Laser GmbH (Germany)

Published in SPIE Proceedings Vol. 4350:
Laser Optics 2000: Solid State Lasers
Vladimir I. Ustugov, Editor(s)

© SPIE. Terms of Use
Back to Top