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Proceedings Paper

Fabrication of oxide phosphor thin film electroluminescent devices using a sol-gel process
Author(s): Tadatsugu Minami; Tetsuya Shirai; Toshihiro Miyata
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Paper Abstract

Thick-insulating-ceramic-type thin-film electroluminescent (TFEL) devices with an oxide phosphor thin-film emitting layer have been fabricated by a sol-gel process that uses various source materials and eliminates the need for vacuum processes. The oxide phosphor thin-film emitting layer consisted of host materials such as Ga2O3, SnO2, ZnGa2O4 and (Ga2O3-Al2O3) multicomponent oxides activated with a transition metal element such as Mn and Cr or a rare earth element such as Eu. High luminances were obtained in TFEL devices with a Ga2O3:Mn, Ga2O3:Cr, SnO2:Eu, ZnGa2O4:Mn or (Ga2O3-Al2O3):Mn phosphor thin-film emitting layer. Luminances above 400 cd/m2 were obtained in green-emitting TFEL devices using Ga2O3:Mn thin films prepared by the sol-gel process, irrespective of source materials, when driven at 60 Hz. It was found that the EL characteristics of oxide phosphor TFEL devices improved as the driving frequency was increased from 60 Hz to 1 kHz. In a Mn- and Cr-co-doped Ga2O3 phosphor TFEL device, an emission color change from green to red as well as high luminances above 100 cd/m2 were obtained when driven at 10 kHz.

Paper Details

Date Published: 21 March 2001
PDF: 12 pages
Proc. SPIE 4235, Smart Structures and Devices, (21 March 2001); doi: 10.1117/12.420890
Show Author Affiliations
Tadatsugu Minami, Kanazawa Institute of Technology (Japan)
Tetsuya Shirai, Kanazawa Institute of Technology (Japan)
Toshihiro Miyata, Kanazawa Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 4235:
Smart Structures and Devices
Dinesh K. Sood; Ronald Albert Lawes; Vasundara V. Varadan, Editor(s)

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