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Proceedings Paper

Dependence of diamond laser processing efficiency on crystallographic directions
Author(s): Sergey V. Shalupaev; Evgeny B. Shershnev; Valentina V. Sviridova; Yury V. Nikitjuk
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Paper Abstract

Laser processing of the diamond can be presented as the following model. After absorption of the first impulses by the diamond, with the power density enough for evaporation, a furrow with a thin graphite layer on the bottom is formed on the surface of the diamond. Energy absorption of the following impulses of laser radiation takes place in the graphite layer created. While constructing of the rated model it is taken into account that during diamond graphitisation hexagonal planes are always parallel to the crystallographic planes (1 1 1) of the diamond in dependence of on the coming laser radiation direction. So the given thermo-physical model of the system diamond- graphite under laser influence predicts the difference in diamond processing productivity at the different crystallographic directions. This result confirms authors experimental researches. Diamond half-finished products which are obtained after sawing up of diamond crystals were put under laser radiation influence and were placed parallel to the axis ofthe fourth level and diamond plates parallel to the axis of the third level. It was discovered that the depth of the furrows obtained is 1,2 times larger than in case when the axis of the laser radiation direction is parallel to the axis of the fourth level, that is consistent with the given thermo-physical model ofthe "diamond-graphite" system placed under laser influence.

Paper Details

Date Published: 15 March 2001
PDF: 5 pages
Proc. SPIE 4358, Optics of Crystals, (15 March 2001); doi: 10.1117/12.418877
Show Author Affiliations
Sergey V. Shalupaev, Gomel State Univ. (Belarus)
Evgeny B. Shershnev, Industrial Integrating Crystal (Belarus)
Valentina V. Sviridova, Gomel State Univ. (Belarus)
Yury V. Nikitjuk, Gomel State Univ. (Belarus)

Published in SPIE Proceedings Vol. 4358:
Optics of Crystals
Vasiliy V. Shepelevich; N. N. Egorov, Editor(s)

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