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Proceedings Paper

Technique of CeF3 impurity concentration control in LaF3 crystals by means of the UV absorption spectra
Author(s): Elena A. Krivandina; Zinaida I. Zhmurova; Tatiana M. Glushkova; Dmitrii F. Kiselev; Marina M. Firsova; Antonina P. Shtyrkova
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Paper Abstract

The presence of impurities in the crystals has an important influence on their properties. A sensitive method of the impurity control in the crystals without their destruction is the investigation of their absorption spectra. In this work we have studied the LaF3 tysonite crystals widely used as the laser matrices. The LaF3 crystals were grown from the melt by Bridgman-Stockbarger method using the reagents with trade mark high pure and chemical pure. The crystal absorption spectra were recorded in the range of 200-300 nm and the obtained results have shown that the crystals grown from the high pure reagents had no absorption bands in the UV region and the crystals grown from the chemical pure reagents had well defined characteristic absorption bands at (lambda) = 205, 218, 235, 248 nm. Spectral experiments have confirmed the assumption that the UV-absorption bands in the latter crystal samples were caused by the presence of CeF3 impurity in the chemical pure reagents. A technique was developed for evaluation of CeF3 content in LaF3 crystals and in chemical pure mixture of LaF3 with the accuracy +/- 0.0005 mol.%.

Paper Details

Date Published: 15 March 2001
PDF: 4 pages
Proc. SPIE 4358, Optics of Crystals, (15 March 2001); doi: 10.1117/12.418851
Show Author Affiliations
Elena A. Krivandina, Shubnikov Institute of Crystallography (Russia)
Zinaida I. Zhmurova, Shubnikov Institute of Crystallography (Russia)
Tatiana M. Glushkova, M.V. Lomonosov Moscow State Univ. (Russia)
Dmitrii F. Kiselev, M.V. Lomonosov Moscow State Univ. (Russia)
Marina M. Firsova, M.V. Lomonosov Moscow State Univ. (Russia)
Antonina P. Shtyrkova, M.V. Lomonosov Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 4358:
Optics of Crystals
Vasiliy V. Shepelevich; N. N. Egorov, Editor(s)

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